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ST3426 Datasheet(PDF) 2 Page - Stanson Technology |
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ST3426 Datasheet(HTML) 2 Page - Stanson Technology |
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2 / 6 page ![]() ST3426 N Channel Enhancement Mode MOSFET 3.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com STN3426 2014. V1 2 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ± 20 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 3.0 1.6 A Pulsed Drain Current IDM 16 A Continuous Source Current (Diode Conduction) IS 1.5 A Power Dissipation TA=25℃ TA=70℃ PD 1.6 1.0 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 75 ℃ /W |
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