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STPS0540ZY Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS0540ZY Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() Characteristics STPS0540-Y 2/7 Doc ID 17966 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 40 V IF(RMS) Forward rms voltage 2 A IF(AV) Average forward current δ = 0.5 Ta = 60 °C 0.5 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 5.5 A dV/dt Critical rate of rise of reverse voltage 10000 V/µs Tstg Storage temperature range -65 to + 150 °C Tj Operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to + 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-a) Junction to ambient(1) 1. Mounted on epoxy board. 500 °C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions typ. max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 40 µA Tj = 100 °C 1.5 5 mA VF (2) 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.29 x IF(AV) + 0.22 x IF 2 (RMS) Forward voltage drop Tj = 25 °C IF = 0.5 A 0.50 V Tj = 100 °C 0.35 0.40 Tj = 25 °C IF = 1 A 0.55 Tj = 100 °C 0.45 0.51 dPtot dTj < 1 Rth(j-a) |
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