Features

• High Surge Capability

TO-249AB Package

• Isolated to Plate

• Not ESD Sensitive

Parameter

Symbol

FST16020

FST16030

Unit

Repetitive peak reverse voltage

20

30

V

RMS reverse voltage

14

21

V

DC blocking voltage

20

30

V

Silicon Power

Schottky Diode

Conditions

FST16020 thru FST16040

FST16040

35

25

FST16035

40

28

40

35

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

FST16020

FST16030

Unit

Average forward current (per

pkg)

160

160

A

Maximum instantaneous

forward voltage (per leg)

0.75

0.75

11

10

10

30

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

0.50

0.50

°C/W

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

160

160

Peak forward surge current (per

leg)

1000

1000

1000

1000

A

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

30

10

10

Conditions

-55 to 150

-55 to 150

FST16040

11

FST16035

0.50

0.50

0.75

0.75

30

mA

V

40

35

-55 to 150

-55 to 150

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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