IRLML6402 datasheet(2/6 Pages) KEXIN

2 / 6 page

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SMD Type

MOSFET

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Min

Typ

Max

Unit

Drain-source Breakdown voltage

VDSS

= 0V

-20

VDS = -20 V, V

= 0V

-1.0

VDS = -20 V, V

= 0V, TJ

℃

-25

ce leadage

=±12V

100

VDS = V , ID

-0.40 -0.55

= -4.5V

0.050

ID= -3.1A, V

= -2.5V

0.080 0.135

Forward Transconductance

gfs

VDS = -10 V, ID

Input capacitance

Ciss

VDS = -10 V,

Output capacitance

Coss

= 0 V,

145

Reverse transfer capacitance

Crss

f= 1MHz

110

8.0

ce Charge

1.2

1.8

rain Charge

2.8

4.2

Turn-on delay time

td(on)

350

Rise time

VDD= -10 V,

Turn-off delay time

td(off)

588

Fall time

381

Reverse recovery time

trr

Reverse recovery charge

Continuous source current

-1.3

Pulsed source curren

ISM

-22

Diode forward voltage

VSD

TJ=25℃,V

= 0 V, IS = -1.0 A

-1.2

tit

lse width limited by max.junction temperature.

e width ≤ 400μs, Duty cycle ≤

TJ=25℃, IF = -1.0 A,

MOSFET symbo

l showing the

integral reverse

p-n junction diode

VDS = -10V ,V

= -5.0 V , ID

IDSS

Static drain-source on- resistance

RDS(on)

Test conditions

Zero Gate Voltage Drain Current

IRLML6402 (KRLML6402)

P-Channel Enhancement MOSFET

■

Marking

1E **

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