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KSMF4N80 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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KSMF4N80 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 7 page  KSMF4N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • 2.2A, 800V, RDS(on) = 3.6Ω @VGS = 10 V • Low gate charge ( typical 19 nC) • Low Crss ( typical 8.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSMF4N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 2.2 A - Continuous (TC = 100°C) 1.39 A IDM Drain Current - Pulsed (Note 1) 8.8 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 460 mJ IAR Avalanche Current (Note 1) 2.2 A EAR Repetitive Avalanche Energy (Note 1) 4.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25°C) 43 W - Derate above 25°C 0.34 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W 3 5 ! ! ! " " " 3 5 ! ! ! " " " S D G TO-220F 2014-6-30 1 www.kersemi.com |
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