SMS840_15 datasheet(2/4 Pages) SECOS

2 / 4 page

SMS840

0.13A , 50V , RDS(ON) 10 Ω

Ω

P-Channel Enhancement MOSFET

Elektronische Bauelemente

25-Nov-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

-50

VGS =0, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

-0.1

µA

VGS=0, VDS = -25V

-15

VGS=0, VDS = -50V

Gate-Source Leakage Current

IGSS

±60

µA

VGS=±20V, VDS =0

Gate-Source Threshold Voltage

VGS(th)

-0.8

-2

VDS =VGS, ID = -1mA

Static Drain-Source On Resistance

RDS(ON)

VGS= -5V, ID = -0.1A

Forward Transconductance

gFS

VDS= -25V,,ID = -0.1A, f=1.0KHz

Dynamic Characteristics

Input Capacitance

Ciss

VDS= -5V, VGS=0, f=1MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-On Delay Time

Td(ON)

VDD= -15V, ,ID= -2.5A,

RL=50 ,

Turn-Off Delay Time

Td(OFF)

Rise Time

Fall Time

Gate Charge

6000

Source-Drain Diode Characteristics

Continuous Current

0.13

Pulsed Current

ISM

0.52

Forward Voltage

VSD

-2.5

Notes:

Pulse Test : PW≤300us, Duty Cycle≤2%.

Switching Time is Essentially Independent of Operating Temperature.

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