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STP45L01F Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STP45L01F Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() Ver1.0 S mHop Microelectronics C orp. a FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Jun,03,2010 1 Details are subject to change without notice. S G D PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Typ 100V 40A 20 @ VGS=10V G D S STF SERIES TO-220F STP45L01F Green Product Symbol VDS VGS IDM EAS 2 50 W A PD °C 62.5 -55 to 150 ID Units Parameter 100 40 118 °C/W V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS °C/W 560 mJ ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a TC=25°C -Pulsed b A Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA A 32 TC=70°C TC=70°C 40 W a a |
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