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WFF8N60 Datasheet(PDF) 2 Page - Wisdom technologies Int`l

Part # WFF8N60
Description  600V N-Channel MOSFET
PDF  6 Pages
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Manufacturer  WISDOM [Wisdom technologies Int`l]
Direct Link  http://www.wisdom-technologies.com/index.aspx
Logo WISDOM - Wisdom technologies Int`l

WFF8N60 Datasheet(HTML) 2 Page - Wisdom technologies Int`l

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HIGH VOLTAGE
N-Channel MOSFET 
 
 
   Rev.A0,August , 2010 | 
2 
 
Electrical Characteristics Tc=25℃ unless other wise noted 
Symbol
Parameter
Test Condition
Min.
Typ.
Max
Units
Off Characteristics
BVDSS
Drain-Sourse Breakdown Voltage
ID=250μA，VGS=0
600
--
--
V
△
BVDSS/
△TJ
Breakdown Voltage Temperature
Conficient
ID=250μA,Reference
to 25℃
--
0.67
--
V/℃
IDSS
Zero Gate Voltage Drain Current
Vds=600V, Vgs=0V
--
--
10
μ
A
Vds=480V, Tc=125℃
100
μ
A
IGSSF
Gate-body leakage Current,
Forward
Vgs=+30V, Vds=0V
--
--
100
nA 
IGSSR
Gate-body leakage Current,
Reverse
Vgs=-30V, Vds=0V
--
--
-100
nA 
On Characteristics
VGS(th)
Date Threshold Voltage
Id=250uA,Vds=Vgs
2
--
4
V
RDS(on)
Static Drain-Sourse On-Resistance Id=3.7A,Vgs=10V
--
--
1.32
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V，VGS=0，
f=1.0MHz
--
1100
1430
pF
Coss
Output Capacitance
--
135
175
pF
Crss
Reverse Transfer Capacitance
--
16
21
pF
Switching Characteristics
Td(on)
Turn-On Delay Time
VDD=300V，ID=7A
RG=25Ω (Note 3,4)
--
30
70
nS
Tr
Turn-On Rise Time
--
80
170
nS
Td(off)
Turn-Off Delay Time
--
65
140
nS
Tf
Turn-Off Fall Time
--
60
130
nS
Qg
Total Gate Charge
VDS=480,VGS=10V，
ID=7A (Note 3,4)
--
29
38
nC
Qgs
Gate-Sourse Charge
--
7
--
nC
Qgd
Gate-Drain Charge
14.5
--
nC
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
Maximun Continuous Drain-Sourse Diode Forward Current
--
--
7.5
A
ISM
Maximun Plused Drain-Sourse DiodeForwad Current
--
--
28
A
VSD
Drain-Sourse Diode Forward
Voltage
Id=7A
--
--
1.5
V
trr
Reverse Recovery Time
IS=7A,VGS =0V
diF/dt=100A/μs (Note3)
--
320
--
nS
Qrr
Reverse Recovery Charge
--
2.4
--
μ
C
*Notes 
1, L=15.7mH, IAS=7.5A, VDD=50V, RG=25Ω, Starting TJ =25°C
 
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature 
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