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NX5DV715 Datasheet(PDF) 5 Page - NXP Semiconductors |
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NX5DV715 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 20 page ![]() NX5DV715 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 4 November 2011 5 of 20 NXP Semiconductors NX5DV715 Dual supply 1-of-2 VGA switch 7.3 Display-Data Channel Multiplexer The NX5DV715 provides two identical SPDT active-level translating switches to route DDC signals (See Table 5). The switch outputs are limited to a diode drop less than the voltage applied on VCC(A). To provide VESA I2C-compatible signals 3.3 V should be applied to VCC(A). If voltage translation is not required VCC(A) should be connected to VCC(B). Switch terminals include integrated pull-up resistors; inputs (SDA0, SCL0) are pulled up to VCC(A), outputs (SDA1, SCL1 and SDA2, SCL2) are pulled up to VCC(B). When the NX5DV715 is disabled (EN = LOW), the pull-up resistors are also disabled. 8. Limiting values [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] For HWQFN32 package: above 137 C the value of P tot derates linearly with 20.5 mW/K. Table 5. Function table DDC H = HIGH voltage level; L = LOW voltage level; X = Don’t care. Input Switch EN SEL H L SDA0 to SDA1, SCL0 to SCL1 H H SDA0 to SDA2, SCL0 to SCL2 L X switches SDAn, SCLn off Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC(A) supply voltage A 0.5 +6 V VCC(B) supply voltage B 0.5 +6 V VI input voltage [1] 0.5 +6 V VSW switch voltage [1] 0.5 +6 V IIK input clamping current VI < 0.5 V 50 - mA ISK switch clamping current VI < 0.5 V 50 - mA IOK output clamping current VO <0V 50 - mA IO output current VO =0VtoVCC(B) - 50 mA ICC supply current ICC(A) or ICC(B) - 100 mA IGND ground current 100 - mA ISW switch current VSW > 0.5 V or VSW < 6 V; source or sink current - 30 mA VSW > 0.5 V or VSW < 6 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current - 90 mA Tstg storage temperature 65 +150 C Ptot total power dissipation Tamb = 40 Cto+85 C [2] - 250 mW |
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