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PJS6812 Datasheet(PDF) 1 Page - Pan Jit International Inc.

Part # PJS6812
Description  20V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  PANJIT [Pan Jit International Inc.]
Direct Link  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJS6812 Datasheet(HTML) 1 Page - Pan Jit International Inc.

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PPJS6812
December 31,2014-REV.02
Page 1
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
3.7A
SOT-23 6L-1
Unit : inch(mm)
Features
RDS(ON) , VGS@4.5V, ID@3.7A<56m
Ω
RDS(ON) , VGS@2.5V, ID@2.8A<69m
Ω
RDS(ON) , VGS@1.8V, ID@1.5A<98m
Ω
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SE2
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
+12
V
Continuous Drain Current
ID
3.7
A
Pulsed Drain Current
IDM
14.8
A
Power Dissipation
Ta=25
oC
PD
1.25
W
Derate above 25
oC
10
mW/
oC
Operating Junction and Storage Temperature Range
TJ,TSTG
-55~150
oC
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
RθJA
100
oC/W
Maximum Ratings and Thermal Characteristics (TA=25
o
C unless otherwise noted)


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