4126D

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R204-030.B



PARAMETER

SYMBOL

RATINGS

UNIT

350

V

200

V

Emitter-Base Voltage

7

V

Collector Current

DC

3

A

Pulse (Note 2)

6

A

Base Current

DC

1

A

Pulse (Note 2)

2

A

Total Dissipation

TO-92

1.5

W

TO-126/TO-251

40

W

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute

maximum ratings are those values beyond which the device could be permanently damaged.

2. Pulse Test: Pulse Width=5.0ms, Duty Cycle<10%.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Case

TO-92

80

°C/W

TO-126/TO-251

3.125

°C/W



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

350

V

Collector-Emitter Breakdown Voltage

200

V

Emitter-Base Breakdown Voltage

7

V

Collector Cut-Off Current

100

µA

Collector-Emitter Cut-Off Current

50

µA

Emitter Cut-Off Current

10

μA

Collector-Emitter Saturation Voltage

0.8

V

1.6

V

Base-Emitter Saturation Voltage

1.5

V

DC Current Gain

8

50

7

Transition Frequency

4

MHz

Storage Time

4

μs

Fall Time

0.7

μs