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MPSA92G-AB3-R Datasheet(PDF) 3 Page - Unisonic Technologies

Part # MPSA92G-AB3-R
Description  HIGH VOLTAGE PNP TRANSISTOR
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MPSA92G-AB3-R Datasheet(HTML) 3 Page - Unisonic Technologies

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MPSA92/93
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R201-019.F
ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
MPSA92
-300
V
Collector-Base Voltage
MPSA93
VCBO
-200
V
MPSA92
-300
V
Collector-Emitter Voltage
MPSA93
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
SOT-89
0.5
W
Collector Dissipation
TO-92/TO-92NL
PC
0.62
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-89
250
°C/W
Junction to Ambient
TO-92/TO-92NL
θJA
200
°C/W
SOT-89
43
°C/W
Junction to Case
TO-92/TO-92NL
θJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
MPSA92
-300
V
Collector-Base Breakdown
Voltage
MPSA93
BVCBO
IC=-100µA, IE=0
-200
V
MPSA92
-300
V
Collector-Emitter Breakdown
Voltage
MPSA93
BVCEO
IC=-1mA, IB=0
-200
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100µA, IC=0
-5
V
MPSA92
-0.25 µA
Collector Cut-Off Current
MPSA93
ICBO
VCB=-200V, IE=0
-0.25 µA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
-0.10 µA
ON CHARACTERISTICS
60
80
DC Current Gain(note)
hFE
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
80
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-20mA, IB=-2mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-20mA, IB=-2mA
-0.90
V
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
50
MHz
MPSA92
6
pF
Output Capacitance
MPSA93
Cob
VCB=-20V, IE=0, f=1MHz
8
pF
Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)<200mV



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