MPSA44HL-AB3-R datasheet(2/4 Pages) UTC

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MPSA44H

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-083.C

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

800

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

Collector Current

300

Collector Dissipation

SOT-89

500

TO-92

625

Junction Temperature

125

°C

Operating Temperature

TOPR

-20 ~ +85

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100μA, IE=0

800

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA, IB=0

400

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, IC=0

Collector Cutoff Current

ICBO

VCB=400V, IE=0

0.1

μA

Collector Cutoff Current

ICEO

VCE=400V, IB=0

0.5

μA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

0.1

μA

ON CHARACTERISTICS

DC Current Gain (Note)

hFE

VCE=10V, IC=1mA

240

VCE=10V, IC=10mA

240

VCE=10V, IC=50mA

240

VCE=10V, IC=100mA

240

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1mA, IB=0.1mA

0.4

IC=10mA, IB=1mA

0.5

IC=50mA, IB=5mA

0.75

Base-Emitter Saturation Voltage

VBE(SAT)

IC=10mA, IB=1mA

0.75

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

VCE=20V,IC=10mA, f=100MHz

MHz

Output Capacitance

COB

VCB=20V, IE=0 f=1MHz

Note: Pulse test: PW<300μs, Duty Cycle<2%

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