DTC123JG-AL6-R datasheet(3/4 Pages) UTC

3 / 4 page

DTC123J

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R206-076.I



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Input Voltage

VIN

-5 ~ +12

100

Output Current

IC(MAX.)

100

SOT-23/SOT-323

SOT-363

200

SOT-523

150

TO-92

625

Power Dissipation

TO-92SP

550

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

VI (OFF)

VCC=5V, IO=100μA

0.5

Input Voltage

VI (ON)

VO=0.3V, IO=5mA

1.1

Output Voltage

VO (ON)

IO/II =5mA/0.25mA

0.1

0.3

Input Current

VI =5V

3.6

Output Current

IO(OFF)

VCC=50V, VI =0V

0.5

μA

DC Current Gain

hFE

VO=5V, IO=10mA

Input Resistance

1.54

2.2

2.86

KΩ

Resistance Ratio

R2/R1

Transition Frequency

VCE =10V, IE=−5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

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