ACE4468B

N-Channel Enhancement Mode MOSFET

VER 1.1

2

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

30

V

Zero gate voltage drain current

1

µA

Gate threshold voltage

1.4

1.9

3

V

Gate leakage current

100

nA

Drain-source on-state resistance

11

14

mΩ

15

22

Forward transconductance

19

S

Diode forward voltage

0.74

1.0

V

Maximum body-diode continuous current

2.6

A

Switching

Total gate charge

7.65

9.95

nC

Gate-source charge

2.82

3.67

Gate-drain charge

2.49

3.24

Turn-on delay time

13.92

27.84

ns

Turn-on rise time

2.64

5.28

Turn-off delay time

31.4

62.8

Turn-off fall time

3.28

6.56

Dynamic

Input capacitance

Ciss

f=1.0MHz

886.01

pF

Output capacitance

Coss

151

Reverse transfer capacitance

Crss

75.77

Note :

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.