© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 2

1

Publication Order Number:

MTP27N10E/D

MTP27N10E

Preferred Device

Power MOSFET

27 Amps, 100 Volts

N−Channel TO−220

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The energy efficient design also

offers a drain−to−source diode with a fast recovery time. Designed for

low voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

Discrete Fast Recovery Diode

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

100

Vdc

100

Vdc

Gate−to−Source Voltage

− Continuous

± 20

± 40

Vdc

Vpk

Drain Current − Continuous @ 25°C

27

17

95

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

104

0.83

Watts

W/°C

Operating and Storage Temperature

Range

−55 to

150

°C

Single Pulse Drain−to−Source Avalanche

109

mJ

Thermal Resistance

− Junction to Case

− Junction to Ambient

1.2

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

260

°C

27 AMPERES

100 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

MTP27N10E

TO−220AB

50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

http://onsemi.com

N−Channel

D

S

G

MARKING DIAGRAM

& PIN ASSIGNMENT

MTP27120E

= Device Code

LL

= Location Code

Y

= Year

WW

= Work Week

MTP27N10E

LLYWW

1

Gate

3

Source

4

Drain

2

Drain