DMC3028LSDXQ datasheet(3/9 Pages) DIODES

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DMC3028LSDXQ

Document number: DS37963 Rev. 1 - 2

3 of 9

www.diodes.com

May 2015

DMC3028LSDXQ

Electrical Characteristics

– Q2 (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30



VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS



-1

VDS = -24V, VGS = 0V

Gate-Source Leakage

IGSS



100

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1



-3

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS (ON)



VGS = -10V, ID = -6A



VGS = -4.5V, ID = -5A

Diode Forward Voltage

VSD



-0.7

-1.2

VGS = 0V, IS = -1.3A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



1241



VDS = -15V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



146



Reverse Transfer Capacitance

Crss



110



Gate Resistance



14.8



VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -4.5V)



10.9





VDS = -15V, ID = -7A

Total Gate Charge (VGS = -10V)



Gate-Source Charge

Qgs



3.5



Gate-Drain Charge

Qgd



4.7



Turn-On Delay Time

tD(on)



9.7



VGS = -10V, VDD = -15V, RGEN = 6Ω,

ID = -7A

Turn-On Rise Time



17.1



Turn-Off Delay Time

tD(off)



60.5



Turn-Off Fall Time



40.4



Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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