VDD

P_OUT

N_OUT

VSS

IN

INB

LM5114

PWM

+

VIN

VOUT

LM5114

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SNVS790F – JANUARY 2012 – REVISED NOVEMBER 2015

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The LM5114 has the features necessary to drive low-side enhancement mode GaN FETs. Due to the fast

switching speed and relatively low gate voltage of enhancement mode GaN FETs, PCB layout is crucial to

achieve reliable operation. Refer to Figure 32 for details.

9.2 Typical Application

Boost DC-DC converter using a 100-V enhancement mode GaN FET (EPC2001) as the boost power switch. The

control circuitry is implemented with the LM5114, a 100-V current mode PWM controller.

Figure 22. Simplified Boost Converter

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