20N50 datasheet(1/2 Pages) ISC

Part #	20N50

Description	Low leakage current

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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e：

：

： www.iscsemi.com

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& iscsemi is registered trademark

1

isc

N-Channel Mosfet Transistor

20N50

·

·FEATURES

·Drain Current ID= 20A@ TC=25℃

·Drain Source Voltage-

: VDSS= 500V(Min)

·Low ON Resistance RDS(on) = 0.27Ω(Max)

·Low leakage current

·Fast Switching

·

·DESCRITION

·Designed for high efficiency switch mode power supply.

·

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃

℃

℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage-Continuous

±30

V

ID

Drain Current-Continuous

20

A

IDM

Drain Current-Single Plused

80

A

PD

Power Dissipation

150

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

range

-55~150

℃

·

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.833

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

50

℃/W

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