CT3400A-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 4

Proprietary & Confidential

Page 3

Aug, 2015

CT3400A-R3

N-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= 250µA

IDSS

Drain-Source Leakage Current

VDS = 30V, VGS = 0V

µ A

IGSS

Gate-Source Leakage Current

VGS = ±12V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = 10V, ID = 6.0A

23.0

VGS = 4.5V, ID = 5.0A

26.0

VGS = 2.5V, ID = 4.0A

35.0

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID =250µA

0.7

1.4

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = 10V ,

VGS = 0V,

f=1MHz

595

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = 10V ,

VGS = 4.5V,

RG = 6 ,

ID =5.8A

2.1

Rise Time

31.0

TD(OFF)

Turn-Off Delay Time

16.5

Fall Time

6.5

Total Gate Charge

VDS = 10V ,

VGS = 4.5V,

ID = 5.8A

QGS

Gate-Source Charge

1.4

QGD

Gate-Drain (Miller) Charge

2.1

CT3400A-R3 Datasheet(PDF) 3 Page - CT Micro International Corporation

CT3400A-R3 Datasheet(HTML) 3 Page - CT Micro International Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL