| Electronic Components Datasheet Search |
|
LF147 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
|
|
|
|||||||||||||||||||||||||||||
LF147 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
|
3 / 13 page ![]() AC Electrical Characteristics (Note 7) Symbol Parameter Conditions LF147 LF347B LF347 Units Min Typ Max Min Typ Max Min Typ Max Amplifier to Amplifier Coupling TA=25˚C, −120 −120 −120 dB f=1 Hz−20 kHz (Input Referred) SR Slew Rate VS=±15V, TA=25˚C 8 13 8 13 8 13 V/µs GBW Gain-Bandwidth Product VS=±15V, TA=25˚C 2.2 4 2.2 4 2.2 4 MHz en Equivalent Input Noise Voltage TA=25˚C, RS=100Ω, 202020 f=1000 Hz in Equivalent Input Noise Current Tj=25˚C, f=1000 Hz 0.01 0.01 0.01 Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func- tional, but do not guarantee specific performance limits. Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 4: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded. Note 5: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA. Note 6: The LF147 is available in the military temperature range −55˚C ≤TA≤125˚C, while the LF347B and the LF347 are available in the commercial temperature range 0˚C ≤TA≤70˚C. Junction temperature can rise to Tj max = 150˚C. Note 7: Unless otherwise specified the specifications apply over the full temperature range and for VS=±20V for the LF147 and for VS=±15V for the LF347B/LF347. VOS,IB, and IOS are measured at VCM=0. Note 8: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited pro- duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem- perature as a result of internal power dissipation, PD.Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum. Note 9: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from VS = ± 5V to ±15V for the LF347 and LF347B and from VS = ±20V to ±5V for the LF147. Note 10: Refer to RETS147X for LF147D and LF147J military specifications. Note 11: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate out- side guaranteed limits. Note 12: Human body model, 1.5 k Ω in series with 100 pF. www.national.com 3 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |