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DMN3042LFDF Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3042LFDF Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMN3042LFDF Datasheet number: DS38985 Rev. 1 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMN3042LFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +70C ID 7.0 5.6 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.5 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 35 A Avalanche Current (L = 0.1mH) (Note 7) IAS 13 A Avalanche Energy (L = 0.1mH) (Note 7) EAS 9 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 0.7 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 177 °C/W t<10s 124 Total Power Dissipation (Note 6) TA = +25°C PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 61 °C/W t<10s 43 Thermal Resistance, Junction to Case Steady State RJC 9.3 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 0.6 1.4 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 17 28 m Ω VGS = 10V, ID = 4.0A 20 32 VGS = 4.5V, ID = 4.0A 24 42 VGS = 3.0V, ID = 4.0A 28 50 VGS = 2.5V, ID = 4.0A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 570 pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss 63 Reverse Transfer Capacitance Crss 53 Gate Resistance Rg 3.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 10V) Qg 13.3 nC VDS = 15V, ID = 6.9A Total Gate Charge (VGS = 4.5V) Qg 6.1 Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd 1.6 Turn-On Delay Time tD(ON) 1.5 ns VGS = 10V, VDD = 15V, RG = 3Ω, ID = 6.9A Turn-On Rise Time tR 3.3 Turn-Off Delay Time tD(OFF) 13.9 Turn-Off Fall Time tF 4.9 Body Diode Reverse Recovery Time tRR 7.8 ns IS = 5A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 1.9 nC IS = 5A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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