MSN15B5H datasheet(2/6 Pages) MORESEMI

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Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 1)

RθJC

0.33

℃

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

150

170

Zero Gate Voltage Drain Current

IDSS

VDS=150V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±200

On Characteristics

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=40A

6.6

Ω

Forward Transconductance

gFS

VDS=50V,ID=40A

150

Dynamic Characteristics

Input Capacitance

Clss

21000

Output Capacitance

Coss

1446

Reverse Transfer Capacitance

Crss

VDS=25V,VGS=0V,

F=1.0MHz

1120

Switching Characteristics

Turn-on Delay Time

td(on)

Turn-on Rise Time

110

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=30V,ID=2A,RL=15Ω

VGS=10V,RG=2.5Ω

Total Gate Charge

586

Gate-Source Charge

Qgs

123

Gate-Drain Charge

Qgd

VDS=30V,ID=30A

VGS=10V

184

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V,IS=40A

1.2

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 75A

di/dt = 100A/

μs

(Note2)

106

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Surface Mounted on FR4 Board, t

≤ 10 sec.

2. Pulse Test: Pulse Width

≤ 400μs, Duty Cycle ≤ 2%.

3. EAS condition：Tj=25℃,VDD=75V,VG=10V,L=0.5mH,Rg=25Ω

ISD≤125A, di/dt≤260A/

μs, VDD≤V(BR)DSS，TJ ≤175°C

MORE Semiconductor Company Limited

http://www.moresemi.com

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MSN15B5H

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