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MSN0608W Datasheet(PDF) 1 Page - MORE Semiconductor Company Limited

Part # MSN0608W
Description  60V(D-S) N-Channel Enhancement Mode Power MOS FET
PDF  6 Pages
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Manufacturer  MORESEMI [MORE Semiconductor Company Limited]
Direct Link  http://www.moresemi.com/
Logo MORESEMI - MORE Semiconductor Company Limited

MSN0608W Datasheet(HTML) 1 Page - MORE Semiconductor Company Limited

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General Features
● VDS = 60V,ID =8A
RDS(ON) < 20mΩ @ VGS=10V
(Typ:14.5m
Ω)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses
Application
● Power switching application
● Load switch
Schematic diagram
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN0608W
SOP-8
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
8
A
Drain Current-Continuous(TC=100℃)
ID (100℃)
5.6
A
Pulsed Drain Current
IDM
32
A
Maximum Power Dissipation
PD
2.1
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
60
/W
℃
MSN0608W
60V(D-S) N-Channel Enhancement Mode Power MOS FET
MSN0608W
2500 units
Lead Free
PIN Configuration
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6


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