MSN1002 datasheet(1/6 Pages) MORESEMI

Part #	MSN1002

Description	100V(D-S) N-Channel Enhancement Mode Power MOS FET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	MORESEMI [MORE Semiconductor Company Limited]

Direct Link	http://www.moresemi.com/

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1 / 6 page

General Features

● VDS = 100V,ID = 2A

RDS(ON) <240m

@ VGS=10V

(Typ:200m )

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (TA=25℃

℃

℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

2

A

Drain Current-Pulsed

(Note 1)

IDM

5

A

Maximum Power Dissipation

PD

1.25

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

100

/W

℃

MSN1002

100V(D-S) N-Channel Enhancement Mode Power MOS FET

MSN1002

Lead Free

PIN Configuration

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

SOT-23

Ø180mm

8 mm

3000 units

D

G

S

Schematic diagram

Marking and pin Assignment

SOT-23 top view

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