Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1.2

1.8

2.5

V

Drain-Source On-State Resistance

-

110

140

m

Ω

Forward Transconductance

-

8

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

690

-

PF

Output Capacitance

-

120

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

90

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

11

-

nS

Turn-on Rise Time

-

7.4

-

nS

Turn-Off Delay Time

-

35

-

nS

Turn-Off Fall Time

-

9.1

-

nS

Total Gate Charge

-

15.5

nC

Gate-Source Charge

-

3.2

-

nC

Gate-Drain Charge

-

4.7

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

6

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

100

110

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

MORE Semiconductor Company Limited

http://www.moresemi.com

2/6

MSN1006T