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MSN1030D Datasheet(PDF) 1 Page - MORE Semiconductor Company Limited

Part # MSN1030D
Description  100V(D-S) N-Channel Enhancement Mode Power MOS FET
PDF  6 Pages
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Manufacturer  MORESEMI [MORE Semiconductor Company Limited]
Direct Link  http://www.moresemi.com/
Logo MORESEMI - MORE Semiconductor Company Limited

MSN1030D Datasheet(HTML) 1 Page - MORE Semiconductor Company Limited

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General Features
● VDS = 100V,ID =30A
RDS(ON) < 31mΩ @ VGS=10V
(Typ:27m
Ω)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
Marking and pin assignment
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN1030D
MSN1030D
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Limit
Unit
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
30
A
ID (100℃)
Drain Current-Continuous(TC=100℃)
21
A
IDM
Pulsed Drain Current
70
A
PD
Maximum Power Dissipation
85
W
Derating factor
0.57
W/℃
EAS
Single pulse avalanche energy
(Note 5)
256
mJ
TJ,TSTG
Operating Junction and Storage Temperature Range
-55 To 175
℃
MSN1030D
100V(D-S) N-Channel Enhancement Mode Power MOS FET
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6
Lead Free
PIN Configuration


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