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MSN1030M Datasheet(PDF) 1 Page - MORE Semiconductor Company Limited

Part # MSN1030M
Description  100V(D-S) N-Channel Enhancement Mode Power MOS FET
PDF  6 Pages
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Manufacturer  MORESEMI [MORE Semiconductor Company Limited]
Direct Link  http://www.moresemi.com/
Logo MORESEMI - MORE Semiconductor Company Limited

MSN1030M Datasheet(HTML) 1 Page - MORE Semiconductor Company Limited

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MSN1030M
General Features
● VDS = 100V,ID =28A
RDS(ON) < 18mΩ @ VGS=10V（Typ：14 mΩ）
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
Marking and pin assignment
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
MSN1030M
TO-263-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
28
A
Drain Current-Continuous(TC=100℃)
ID (100℃)
20
A
Pulsed Drain Current
IDM
160
A
Maximum Power Dissipation
PD
150
W
Derating factor
-
1
W/℃
Single pulse avalanche energy
(Note 5)
EAS
550
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
MSN1030M
100V(D-S) N-Channel Enhancement Mode Power MOS FET
MORE Semiconductor Company Limited
http://www.moresemi.com
1/6


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