MSN1550K datasheet(1/6 Pages) MORESEMI

Part #	MSN1550K

Description	150V(D-S) N-Channel Enhancement Mode Power MOS FET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	MORESEMI [MORE Semiconductor Company Limited]

Direct Link	http://www.moresemi.com/

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1 / 6 page

General Features

● VDS =150V,ID =50A

RDS(ON) <23mΩ @ VGS=10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and High frequency circuits

● Uninterruptible power supply

Schematic diagram

Marking and pin assignment

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-220-3L

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

150

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

50

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

35

A

Pulsed Drain Current

IDM

210

A

Maximum Power Dissipation

PD

220

W

Derating factor

1.47

W/℃

Single pulse avalanche energy (Note 5)

EAS

640

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

MSN1550K

150V(D-S) N-Channel Enhancement Mode Power MOS FET

Lead Free

PIN Configuration

MORE Semiconductor Company Limited

http://www.moresemi.com

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