7-11GHz Low Noise Amplifier

CHA1010-99F

Ref. : DSCHA10103333 - 29 Nov 13

3/10

Specifications subject to change without notice

Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

Tamb= +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

6.5V

V

Id

Drain bias current

120

mA

Vg

Gate bias voltage

-1.5 to +0.4

V

Tj

Maximum junction temperature

175

°C

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +150

°C

Pin

Maximum peak input power overdrive

-19

dBm

damage

Rth_eq = 73°C/W (Chip’s equivalent thermal resistance at +85°C backside temperature).

The Rth_eq is extrapolated, taking in account the full chip DC power and the real

temperature increase from the worst case transistor Rth.

Typical Bias Conditions

Tamb= +25°C

Symbol

Parameter

Values

Unit

Vd

5

Drain Supply Voltage

5

V

Vg

2

Gate Supply Voltage

-0.5

V