2SB435 datasheet(2/2 Pages) ISC

Part #	2SB435

Description	isc Silicon PNP Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SB435

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -10mA; IB= 0

-40

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -0.05A

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -0.5A; VCE= -5V

-0.9

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

-10

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

hFE1

DC Current Gain

IC= -0.5A; VCE= -5V

240

hFE2

DC Current Gain

IC= -2.5A; VCE= -5V

COB

Output Capacitance

IE=0; VCB= -10V; f= 1.0MHz

150

Current-Gain—Bandwidth Product

IC=-0.5A ; VCE= -5V

MHz



hFE-1 Classifications

40-80

70-140

120-240

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