MBR1100CT datasheet(4/6 Pages) SMC

4 / 6 page

SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N0735, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

MBR1080/90/100CT

MBRB1080/90/100CT

MBR1080/90/100CT-1

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Forward Voltage Drop

(per leg) *

VF1

@ 3A, Pulse, TJ = 25 °C

@ 5A, Pulse, TJ = 25 °C

0.78

0.85

VF2

@ 3 A, Pulse, TJ = 125 °C

@ 5 A, Pulse, TJ = 125 °C

0.65

0.75

Reverse Current (per leg) *

IR1

@VR = rated VR

TJ = 25 °C

1.00

IR2

@VR = rated VR

TJ = 125 °C

Junction Capacitance

(per leg)

@VR = 5V, TC = 25 °C

fSIG = 1MHz

300

Typical Series Inductance

(per leg)

Measured lead to lead 5 mm from

package body

8.0

Voltage Rate of Change

dv/dt

10,000

μs

* Pulse Width < 300µs, Duty Cycle <2%

Thermal-Mechanical Specifications:

Characteristics

Symbol

Condition

Specification

Units

Junction Temperature

-55 to +150

°C

Storage Temperature

Tstg

-55 to +150

°C

Maximum Thermal

Resistance Junction to Case

(per leg)

RθJC

DC operation

2.0

°C/W

Maximum Thermal

Resistance, Case to Heat

Sink

RθCS

Mounting surface, smooth and

greased

(only for TO-220)

0.50

°C/W

Approximate Weight

Case Style

TO-220AB D

2PAK TO-262

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