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AS5SP512K36 Datasheet(PDF) 3 Page - Micross Components

Part # AS5SP512K36
Description  On-Chip Address and Control Registers
PDF  12 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

AS5SP512K36 Datasheet(HTML) 3 Page - Micross Components

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SSRAM
AS5SP512K36
AS5SP512K36
Rev. 3.0 10/13
Micross Components reserves the right to change products or specifications without notice.
3
Micross Components AS5SP512K36 Synchronous SRAM is
manufactured to support today’s High Performance platforms
utilizing the industry’s leading processor elements including
those of Intel and Motorola. The AS5SP512K36 supports
Synchronous SRAM READ and WRITE operations as well as
Synchronous Burst READ/WRITE operations. All inputs with
the exception of OE\, MODE and ZZ are synchronous in nature
and registered on the rising edge of input clock (CLK). The
type, start and duration of Burst Mode operations is controlled
by MODE, ADSC\, ADSP\ and ADV\. All synchronous
accesses, including the Burst accesses, are enabled via the use
of the multiple enable pins, and wait state insertion is supported
and controlled via the use of the Address Advance (ADV\).
The AS5SP512K36 supports both Interleaved and Linear Burst
modes.
The AS5SP512K36 supports Byte WRITE operations via the
Byte Write Enable (BWE\) and the Byte Write Select pin(s)
(BWa\, BWb\, BWc\, BWd\). Global Writes are supported
via the Global Write Enable (GW\). Global Write Enable will
override the Byte Write inputs and will perform a Write to all
36 Data Bits.
The AS5SP512K36 provides ease of producing very
dense arrays via the multiple Chip Enable input pins and
Asynchronous Output Enable.
Single Cycle Access Operations
A Single READ operation is initiated at the rising edge of Clock
when all of the following conditions are satisfied: [1] ADSP\
or ADSC\ is asserted LOW, [2] Chip Enables are all asserted
active, and [3] the WRITE signals (GW\, BWE\) are HIGH.
ADSP\ is ignored if CE1\ is HIGH. The address presented to
the Address inputs is stored within the Address Registers and
Address Counter/Advancement Logic and presented to the
array core. The corresponding data of the addressed location
is propagated to the Output Registers and passed to the data
bus on the next rising clock via the Output Buffers. The time
at which the data is presented to the Data bus is as specified
by either the Clock to Data valid specification or the Output
Enable to Data Valid spec for the device speed grade chosen.
The only exception occurs when the device is emerging from
a deselected to selected state where its outputs are tristated in
the first machine cycle and controlled by its Output Enable
(OE\) on following
cycle. Consecutive single cycle READS are supported. Once
the SRAM is deselected by use of the Chip Enable(s) and either
ADSP\ or ADSC\, its outputs will tri-state immediately.
A Single ADSP\ controlled WRITE operation is initiated when
both of the following conditions are satisfied at the rising edge
of Clock: [1] ADSP\ is asserted LOW, and [2] Chip Enable(s)
are asserted ACTIVE. The WRITE controls: Global Write,
Byte Write Enable (GW\, BWE\) the individual Byte Writes
(BWa\, BWb\, BWc\, BWd\), and ADV\ are ignored on the
first machine cycle. ADSP\ triggered WRITE accesses require
two (2) machine cycles to complete. If Global Write is asserted
LOW on the second Clock (CLK) rise, data will be written into
the selected address location. If GW\ is HIGH (inactive) then
the WRITE operation is controlled by BWE\ and one or more
of the Byte Write controls (BWa\, BWb\, BWc\ and BWd\).
All WRITES that are initiated in this device are internally self
timed.
A Single ADSC\ controlled WRITE operation is initiated at
the rising edge of Clock when the following conditions are
satisfied: [1] ADSC\ is asserted LOW, [2] ADSP\ is de-asserted
(HIGH), [3] Chip Enable(s) are asserted (TRUE or Active),
and [4] the appropriate combination of the WRITE inputs
(GW\, BWE\, BWx\) are asserted (ACTIVE). ADSC\ triggered
WRITE accesses require a single clock (CLK) machine cycle
to complete. The ADV\ pin is ignored during this cycle.
Deep Power-Down Mode (SLEEP)
The AS5SP512K36 has a Deep Power-Down mode and is
controlled by the Asynchronous ZZ pin. Two clock cycles are
required to enter into or exit from this “sleep” mode. While
in this mode, Data integrity is guaranteed. For the device to
be placed successfully into this operational mode the device
must be deselected and the Chip Enables, ADSP\ and ADSC\
remain inactive for the duration of tZZREC after the ZZ input
returns LOW. Accesses pending when entering “sleep” mode
are not considered valid.
Functional Description



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