MBR30020CT datasheet(1/3 Pages) GENESIC

Part #	MBR30020CT

Description	High Surge Capability

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 20 V - 40 V

IF(AV) = 300 A

Features

• High Surge Capability

Twin Tower Package

• Not ESD Sensitive

Parameter

Symbol

MBR30020CT(R) MBR30030CT(R)

Unit

Repetitive peak reverse

voltage

VRRM

20

30

V

RMS reverse voltage

VRMS

14

21

V

• Types from 20 V to 40 V VRRM

Conditions

40

28

MBR30020CT thru MBR30040CTR

MBR30040CT(R)

35

25

MBR30035CT(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

DC blocking voltage

VDC

20

30

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR30020CT(R) MBR30030CT(R)

Unit

Average forward current

(per pkg)

IF(AV)

300

A

Maximum forward

voltage (per leg)

0.70

11

10

50

Thermal characteristics

Thermal resistance,

junction-case, per leg

R

ΘJC

0.40

°C/W

Tj = 100 °C

10

TC = 125 °C

300

Peak forward surge

current (per leg)

IFSM

tp = 8.3 ms, half sine

2000

V

-55 to 150

40

35

A

-55 to 150

MBR30040CT(R)

11

MBR30035CT(R)

0.40

Tj = 150 °C

0.40

0.70

50

mA

Tj = 25 °C

IFM = 150 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Reverse current at rated

DC blocking voltage

(per leg)

IR

VF

50

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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