0.01 - 4.0 GHz Higher Power Applications

Rev. V1

MASW-000932

2

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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2

Parameter

100 mA / 28V Conditions

Units

Min.

Typ.

Max.

Pin= 0 dBm

dB

—

—

—

—

—

—

.60

.25

.72

.35

.80

.45

.80

—

.90

—

.95

—

Pin= 0 dBm

dB

40.0

—

39.0

—

34.0

—

43.0

14.0

41.5

12.0

35.0

10.0

—

—

—

—

—

—

Pin= 0 dBm

dB

—

34

17

—

dBm

—

49

—

Pin = + 30 dBm

dBc

—

80

—

Pin = + 30 dBm

dBc

—

95

—

Pin = +10 dBm, F1 = 2010 MHz, F2 = 2020 MHz

dBm

—

72

—

25°C Base plate, 2.01 GHz

dBm

W

—

49

80

—

85°C Base plate, 2.01 GHz

dBm

W

—

46.5

45

—

—

dBm

W

—

41.5

14

—

( 10-90% RF Voltage)

1 MHz Rep Rate in Modulating Mode

ns

—

200

—

3. See Bias Table

Parameter

Absolute Maximum

Forward Current

125 mA

Reverse Voltage ( RF & D.C. )

-200 V

Operating Temperature

-40 °C to +85 °C

Storage Temperature

-55 °C to +150 °C

Junction Temperature

+175 °C

@ 2010MHz

4. Exceeding these limits may cause permanent damage.

5. M/A-COM Technology Solutions does not recommend sustained

operation near these survivability limits.

6. Baseplate temperature must be controlled to a constant +25°C.

7. This rating is guaranteed if the RF ports are terminated.