MSN05B2K-TO220 datasheet(2/6 Pages) MORESEMI

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Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

0.75

℃

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=55V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=40A

4.1

5.5

Ω

Forward Transconductance

gFS

VDS=25V,ID=40A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

4900

Output Capacitance

Coss

470

Reverse Transfer Capacitance

Crss

VDS=25V,VGS=0V,

F=1.0MHz

460

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=30V,ID=2A

VGS=10V,RGEN=2.5Ω

Total Gate Charge

125

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=30V,ID=30A,

VGS=10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=40A

1.2

Diode Forward Current

(Note 2)

120

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

Tj=25℃,IF=75A,di/dt=100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,VDD=28V,VG=10V,L=0.5mH,Rg=25Ω

MSN05B2K

MORE Semiconductor Company Limited

http://www.moresemi.com

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