STGY80H65DFB datasheet(21/22 Pages) STMICROELECTRONICS

21 / 22 page

DocID024366 Rev 6

21/22

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB

Revision history

Table 12. Document revision history

Date

Revision

Changes

12-Mar-2013

Initial release.

18-Sep-2013

Document status promoted from preliminary to production data.

Added Section 2.1: Electrical characteristics (curves)

20-Nov-2013

Added device in Max247.

Modified Table 1 accordingly.

Updated Section 4: Package information.

Minor text changes in cover page.

24-Jan-2014

Updated title and description in cover page.

Updated Table 6: IGBT switching characteristics (inductive load),

Table 7: Diode switching characteristics (inductive load), Figure 9:

Forward bias safe operating area and Figure 14: Switching loss vs.

temperature.

13-Jun-2014

Updated Figure 5: Collector current vs. case temperature, Figure 6:

Power dissipation vs. case temperature, Figure 18: Switching times

vs. collector current, Figure 19: Switching times vs. gate resistance

and Figure 24: Capacitance variations.

Added Figure 25: Collector current vs. switching frequency.

Updated Section 4: Package information.

07-May-2015

Added TO-247 long leads package information

STGY80H65DFB Datasheet(PDF) 21 Page - STMicroelectronics