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STP160N3LL Datasheet(PDF) 1 Page - STMicroelectronics |
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STP160N3LL Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  June 2015 DocID025073 Rev 3 1/13 This is information on a product in full production. www.st.com STP160N3LL N- channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STP160N3LL 160N3LL TO-220 Tube |
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