NAND01GR3A datasheet(36/57 Pages) STMICROELECTRONICS

Part #	NAND01GR3A

Description	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

PDF	57 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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36 / 57 page

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

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Table 19. DC Characteristics, 3V Devices

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

IDD1

Operating

Current

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA

IDD2

Program

IDD3

Erase

IDD4

Stand-by Current (TTL),

128Mb, 256Mb, 512Mb devices

E=VIH, WP=0V/VDD

Stand-by Current (TTL)

512Mb and 1Gb Dual Die devices

IDD5

Stand-By Current (CMOS)

128Mb, 256Mb, 512Mb devices

E=VDD-0.2,

WP=0/VDD

µA

Stand-By Current (CMOS)

512Mb and 1Gb Dual Die devices

100

µA

ILI

Input Leakage Current

VIN= 0 to VDDmax

±10

µA

ILO

Output Leakage Current

VOUT= 0 to VDDmax

±10

µA

VIH

Input High Voltage

2.0

VDD+0.3

VIL

Input Low Voltage

−0.3

0.8

VOH

Output High Voltage Level

IOH = −400µA

2.4

VOL

Output Low Voltage Level

IOL = 2.1mA

0.4

IOL (RB)

Output Low Current (RB)

VOL = 0.4V

VLKO

VDD Supply Voltage (Erase and

Program lockout)

2.5

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