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SW069R06VT Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW069R06VT Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Nov. 2016. Rev. 2.0 1/6 SW069R06VT Absolute maximum ratings Symbol Parameter Value Unit TO-251 DFN5*6 V DSS Drain to source voltage 60 V I D Continuous drain current (@T C=25 oC) 60* A Continuous drain current (@T C=100 oC) 38* A I DM Drain current pulsed (note 1) 240 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 324 mJ E AR Repetitive avalanche energy (note 1) 18 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 208 1.6 W Derating factor above 25oC 1.7 0.01 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-251 DFN5*6 R thjc Thermal resistance, Junction to case 0.6 oC/W R thja Thermal resistance, Junction to ambient 77 77 oC/W *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source Order Codes Item Sales Type Marking Package Packaging 1 SW I 069R06VT SW069R06VT TO-251 TUBE 2 SW HA 069R06VT SW069R06VT DFN5*6 REEL N-channel Enhanced mode TO-251/DFN5*6 MOSFET Features High ruggedness Low R DS(ON) (Typ 7.0mΩ)@VGS=4.5V (Typ 6.0m Ω)@V GS=10V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 100% Avalanche Tested Application:Electronic Ballast, Motor Control Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 60V I D : 60A R DS(ON) :7.0mΩ@VGS=4.5V 6.0m Ω@V GS=10V 1 2 3 TO-251 1 2 3 DFN5*6 |
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