2SC5624 datasheet(2/8 Pages) HITACHI

2 / 8 page

2SC5624

Rev.2.00, Oct.21.2003, page 2 of 7

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

Collector to emitter voltage

VCEO

3.5

Emitter to base voltage

VEBO

0.8

Collector current

Collector power dissipation

100

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector to base breakdown

voltage

V(BR)CBO

—

IC = 10

µA , IE = 0

Collector cutoff current

ICBO

——

µAVCB = 8 V , IE = 0

Collector cutoff current

ICEO

——

µAVCE = 3 V , RBE = ∞

Emitter cutoff current

IEBO

——

µAVEB = 0.8 V , IC = 0

DC current transfer ratio

hFE

120

160

VCE = 2 V , IC = 20 mA

Collector output capacitance

Cob

—

0.3

0.6

VCB = 2 V , IE = 0

f = 1 MHz

Gain bandwidth product

—

GHz

VCE = 2 V , IC = 30 mA

f = 2 GHz

Power gain

—

VCE = 2 V, IC = 30 mA

f = 1.8 GHz

Noise figure

—

1.2

1.6

VCE = 2 V, IC = 5 mA

f = 1.8 GHz

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