STN8205A

Dual N Channel Enhancement Mode MOSFET

5.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STN8205A 2007. V1

DESCRIPTION

STN8205A is the dual N-Channel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, such as notebook computer power management and

other battery powered circuits, where high-side switching is required.

PIN CONFIGURATION

TSSOP-8

Y: Year Code

A: Date Code

B: Process Code

FEATURE

l

l

l

Super high density cell design for

l

Exceptional low on-resistance and

maximum DC current capability

l

TSSOP-8 package design

D2 S2 S2 G2

D1 S1 S1 G1