FEATURES

D LITTLE FOOT Plust—Dual TrenchFETr

Power MOSFET Plus Integrated Schottky

Diode

D PWM Optimized for Faster Swtiching

APPLICATIONS

D DC/DC Conversion for 3- to 6-A Output

Current

– Notebook

– Desktop

Si4854DY

Vishay Siliconix

New Product

Document Number: 71444

S-03476—Rev. A, 16-Apr-01

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

6.9

30

6.4

5.5

SCHOTTKY PRODUCT SUMMARY

Diode Forward Voltage

30

0.50 V @ 1.0 A

2.0

SO-8

5

6

7

8

Top View

2

3

4

1

N-Channel MOSFET

N-Channel MOSFET

Schottky Diode

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

30

Gate-Source Voltage

"12

V

_

6.9

5.1

5.5

4.1

Pulsed Drain Current

30

A

1.7

0.9

2.0

1.1

1.3

0.7

W

Operating Junction and Storage Temperature Range

–55 to 150

_C

THERMAL RESISTANCE RATINGS

MOSFET

Schottky

Parameter

Symbol

Typ

Max

Typ

Max

Unit

t

v 10 sec

52

62.5

53

62.5

Steady-State

93

110

93

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady-State

35

40

35

40

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.