| Manufacturer | Part # | Datasheet | Description |
 Vishay Siliconix |
VB20120C
|
285Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024
|
|
VB20120C-E3
|
285Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024
|
 Inchange Semiconductor ... |
VB20120C-E3
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20120C-E3/4W
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB20120C-E3/4W
|
285Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024
|
|
VB20120C-E3/8W
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB20120C-E3/8W
|
285Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Revision: 23-Feb-2024
|
|
VB20120C-M3
|
89Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
14-May-13
|
|
VB20120C-M3
|
103Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018
|
 Inchange Semiconductor ... |
VB20120C-M3
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20120C-M3
|
79Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
14-May-13
|
|
VB20120C-M3
|
103Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
19-Jun-2018
|