| Manufacturer | Part # | Datasheet | Description |
 Advanced Power Technolo... |
APT5010B2LC
|
119Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
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APT5010B2LC
|
66Kb/2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
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APT5010B2LL
|
68Kb/2P |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
|
APT5010B2LL
|
173Kb/5P |
POWER MOS 7 MOSFET
|
 Microsemi Corporation |
APT5010B2LL
|
2Mb/5P |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
|
 Inchange Semiconductor ... |
APT5010B2LL
|
419Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT5010B2FLL
|
63Kb/2P |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
|
APT5010B2FLL
|
174Kb/5P |
POWER MOS 7 FREDFET
|
 Inchange Semiconductor ... |
APT5010B2FLL
|
419Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT5010B2FLL
|
174Kb/5P |
POWER MOS 7 FREDFET
|
|
APT5010B2VFR
|
64Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
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APT5010B2VR
|
61Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
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APT5010B2VR
|
66Kb/4P |
New T-MAX??Package (Clip-mounted TO-247 Package)
|
 Inchange Semiconductor ... |
APT5010B2VR
|
336Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT5010B2VRG
|
66Kb/4P |
New T-MAX??Package (Clip-mounted TO-247 Package)
|
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APT5010B2
|
63Kb/2P |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
|
APT5010JFLL
|
63Kb/2P |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
|
APT5010JFLL
|
175Kb/5P |
POWER MOS 7 FREDFET
|
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APT5010JFLL
|
175Kb/5P |
POWER MOS 7 FREDFET
|
|
APT5010JLC
|
35Kb/2P |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|