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STLD257N4F7AG Datasheet (PDF) - STMicroelectronics
STLD257N4F7AG Datasheet PDF - STMicroelectronics
Part # STLD257N4F7AG
Download  STLD257N4F7AG Download
File Size   1936.89 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 40 V, 0.82 m typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DSC package

STLD257N4F7AG Datasheet (PDF)

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STLD257N4F7AG Datasheet PDF - STMicroelectronics

Part # STLD257N4F7AG
Download  STLD257N4F7AG Click to download

File Size   1936.89 Kbytes
Page   13 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 40 V, 0.82 m typ., 120 A, STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 DSC package

STLD257N4F7AG Datasheet (HTML) - STMicroelectronics


STLD257N4F7AG Product details

Features
• AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
• Wettable flank package

Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an
enhanced trench gate structure that results in very low on-state resistance, while also
reducing internal capacitance and gate charge for faster and more efficient switching.

Applications
• Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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