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RQG2001URAQF Datasheet (PDF) - Renesas Technology Corp
RQG2001URAQF Datasheet PDF - Renesas Technology Corp
Part # RQG2001URAQF
Download  RQG2001URAQF Download
File Size   247.17 Kbytes
Page   27 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

RQG2001URAQF Datasheet (PDF)

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RQG2001URAQF Datasheet PDF - Renesas Technology Corp

Part # RQG2001URAQF
Download  RQG2001URAQF Click to download

File Size   247.17 Kbytes
Page   27 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

RQG2001URAQF Datasheet (HTML) - Renesas Technology Corp


RQG2001URAQF Product details

Features
• Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
• Low Distortion and Excellent Linearity
   IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz
• High Transition Frequency
   fT = 20 GHz typ.
• High Collector to Emitter Voltage
   VCEO = 5 V




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About Renesas Technology Corp

Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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