1 Features
• Ultra-low on-resistance
• Ultra-low Qg and Qgd
• Low threshold voltage
• Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
• Ultra-low profile
– 0.36 mm height
• Integrated ESD protection diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and halogen free
• RoHS compliant

2 Applications
• Optimized for load switch applications
• Optimized for general purpose switching
applications
• Single-cell battery applications
• Handheld and mobile applications

3 Description
This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing at least a 60%
reduction in footprint size.