| Manufacturer | Part # | Datasheet | Description |
NXP Semiconductors |
PDTA123E
|
189Kb / 14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
2004 Aug 02 |
ON Semiconductor |
MUN2131
|
133Kb / 10P |
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
January, 2015 ??Rev. 4 |
|
MUN2231
|
127Kb / 10P |
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
August, 2012 ??Rev. 0 |
|
MUN5231DW1
|
140Kb / 6P |
Dual NPN Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
September, 2012 ??Rev. 0 |
|
NSBC123TPDP6
|
106Kb / 6P |
Complementary Bias Resistor Transistors R1 = 2.2 k, R2 = k
September, 2012 ??Rev. 0 |
|
MUN2231
|
103Kb / 11P |
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
January, 2015 ??Rev. 2 |
Nexperia B.V. All right... |
PEMB10
|
917Kb / 16P |
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 3 - 3 January 2012 |
|
PEMB10
|
917Kb / 16P |
PNP/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 3 - 3 January 2012 |
|
PDTA123J_SER
|
1Mb / 18P |
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 5 - 21 December 2011 |
|
PEMD10
|
1Mb / 17P |
NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 6 - 4 January 2012 |
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