MUN5131DW1 datasheet(3/6 Pages) ONSEMI

3 / 6 page

MUN5131DW1, NSBA123EDXV6

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

2.3

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

−

Vdc

Collector−Emitter Breakdown Voltage (Note 4)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

−

Vdc

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = 5.0 mA, VCE = 10 V)

hFE

8.0

−

Collector−Emitter Saturation Voltage (Note 4)

(IC = 10 mA, IB = 5.0 mA)

VCE(sat)

−

0.25

Vdc

Input Voltage (off)

(VCE = 5.0 V, IC = 1.0 mA)

Vi(off)

−

1.2

−

Vdc

Input Voltage (on)

(VCE = 0.2 V, IC = 20 mA)

Vi(on)

−

1.9

−

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

1.5

2.2

2.9

Resistor Ratio

R1/R2

0.8

1.0

1.2

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

Figure 1. Derating Curve

AMBIENT TEMPERATURE (°C)

125

100

−25

−50

100

150

200

250

400

150

(1) (2)

(1) SOT−363; 1.0 x 1.0 inch Pad

(2) SOT−563; Minimum Pad

350

300

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